12 June 2018 Advanced ceramic protective lifetime prolong for particle control
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Abstract
As technical advances continue, the pattern size of semiconductor circuit has been shrunk. Defect control becomes tighter due to decrease in defect size that affects the image printed on the wafer. It is critical to the photomask which contained considerably shrunk circuit and ultra high density pattern for sub – 20nm tech device. Therefore particle source from all processes should be controlled extremely. Especially for dry etching process, Yttrium oxide (Y2O3) has been widely used for plasma resistance protective material such as lower electrode cover plate and inductively coupled plasma insulator. However, Y2O3 showed highest erosion rates under Cl2 plasma condition [1], shorten protective lifetime. Therefore, selection of ceramic material must be important for particle control in dry etch process.

In this paper, we introduce Y2O3 coating film fluorination after plasma treatment. Y-F and Y-O bonding energies change after plasma treatment was observed with X-ray photoelectron spectroscopy (XPS). Expect fluorinated surface can prolong protective lifetime in Cl2 plasma condition.
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Yuan Hsu, Yutaka Satou, "Advanced ceramic protective lifetime prolong for particle control", Proc. SPIE 10807, Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology, 108070J (12 June 2018); doi: 10.1117/12.2318943; https://doi.org/10.1117/12.2318943
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