Translator Disclaimer
1 October 2018 AC dielectric properties of SiO2 thin layers implanted with In and Sb ions
Author Affiliations +
Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108085K (2018) https://doi.org/10.1117/12.2501667
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland
Abstract
In this paper results of AC measurements of phase angle θ, capacity Cp and loss tangent tgδ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karolina Czarnacka, Tomasz N. Koltunowicz, and Aleksander K. Fedotov "AC dielectric properties of SiO2 thin layers implanted with In and Sb ions", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108085K (1 October 2018); https://doi.org/10.1117/12.2501667
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
Back to Top