Accelerator-based compact extreme ultraviolet (EUV) sources for lithography

Juhao Wu; Alexander W. Chao

doi:10.1117/12.2501900

3 October 2018 Accelerator-based compact extreme ultraviolet (EUV) sources for lithography

Juhao Wu, Alexander W. Chao

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 1080907 (2018) https://doi.org/10.1117/12.2501900
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) is a next-generation technology using light at 13.5 nm. We start with general discussion about accelerator based approaches for compact EUV source generation, including Laser Induced Microbunching (LIM) schemes, High-Gain Inverse Compton (HGIC) source, etc. Such accelerator based EUV sources are compared to laser-produced plasma (LPP) source. Besides the high average power required by EUVL; for industrial applications, EUV source’s stability is an important measure. A storage-ring based steadystate microbunching (SSMB) configuration (Chao, Int. J. Mod. Phys. A, 2015) is a very promising approach providing EUV source at kilowatts level average power meeting the high volume manufacturing requirements for EUVL. SSMB overcomes the large pulse-to-pulse power fluctuation commonly existing in single-pass high-gain systems, e.g., a self-amplified spontaneous emission (SASE) free-electron laser. In a reversible SSMB configuration, the generation of high peak power EUV source and keeping high repetition rate are nicely decoupled.

Conference Presentation

Citation Download Citation

Juhao Wu and Alexander W. Chao "Accelerator-based compact extreme ultraviolet (EUV) sources for lithography", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080907 (3 October 2018); https://doi.org/10.1117/12.2501900

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