AIMER™: full reticle area, scanner-effective EUV mapping reflectometry

A. Biermanns-Föth; C. Phiesel; T. Missalla; J. Arps; C. Piel; R. Lebert

doi:10.1117/12.2501794

3 October 2018 AIMER^TM: full reticle area, scanner-effective EUV mapping reflectometry

A. Biermanns-Föth, C. Phiesel, T. Missalla, J. Arps, C. Piel, R. Lebert

Proceedings Volume 10809, International Conference on Extreme Ultraviolet Lithography 2018; 108091I (2018) https://doi.org/10.1117/12.2501794
Event: SPIE Photomask Technology + Extreme Ultraviolet Lithography, 2018, Monterey, California, United States

Abstract

EUV-Lithography is preparing for high volume manufacturing. For actinic qualification of components for EUVL like mask blanks, masks, pellicles or optics, spectral resolved metrology (e.g. reflectometry) is frequently applied. With the EUV-AIME effective inband mapping reflectometry we demonstrated a proprietary new concept for full area qualification of mask blanks or masks. While spectral reflectance measurements provide unweighted information on peak reflectance (R_max), central wavelength of the reflection curves (CWL₅₀) and bandwidth (FWHM), AIMER combines those to an effective figure of merit “as effectively seen by the EUVL scanner”. Short measurement times are achieved because a single acquisition measures about 25*15 mm² in less than 5 seconds. A full (152 mm)² reticle map is acquired in less than one hour, including sample load and unload. AIMER provides intrinsic spatial resolution of (20μm)², delivering sensitivity to larger defects or allowing for finding marks or small metrology pads on structured EUV masks. When compared to the typical 1 mm² spot measured in the spectral mode, AIMER excels in higher number of photons collected and such lower shot noise limits in reproducibility.

Conference Presentation

Citation Download Citation

A. Biermanns-Föth, C. Phiesel, T. Missalla, J. Arps, C. Piel, and R. Lebert "AIMER^TM: full reticle area, scanner-effective EUV mapping reflectometry", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108091I (3 October 2018); https://doi.org/10.1117/12.2501794

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