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19 October 2018 Track based techniques to improve high-resolution EUV patterning defectivity
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Abstract
Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates under consideration for enabling the next generation of devices, for 7nm node and beyond. As the focus shifts to driving down the 'effective' k1 factor and enabling the second generation of EUV patterning, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse, and eliminate film-related defects. In addition, CD uniformity improvements must be continued to meet patterning performance requirements. Tokyo Electron Limited (TELTM) and IBM Corporation are continuously developing manufacturing quality processes for EUV.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoki Shibata, Lior Huli, Corey Lemley, Dave Hetzer, Eric Liu, Ko Akiteru, Shinichiro Kawakami, Karen Petrillo, Luciana Meli, Nelson Felix, Cody Murray, Alex Hubbard, and Rick Johnson "Track based techniques to improve high-resolution EUV patterning defectivity", Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 1080922 (19 October 2018); https://doi.org/10.1117/12.2501668
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