3 October 2018 Simulation of fogging electron trajectories in a scanning electron microscope
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We have been seeking the energy, the angle and the spatial distribution of electrons present in a scanning electron microscope specimen chamber. The first basic concept of the new electron scattering simulation in this study is that the backscattering yield and the secondary yield agree with their experimental results in a wide range of electron beam energies. By adjusting the parameters of the simulation, the quantitative number of electrons emitted in vacuum is reasonable. The second concept is that the same simulation is applied in the electron scattering phenomena in the objective lens electrode placed opposite the specimen surface. On the assumption that an electric field is applied to the vacuum in between the specimen and the objective lens electrode, deflection of electron trajectory due to the electric field is taken into account. In order to confirm the validity of this simulation, experiments were carried out to measure the number of electrons collected in both electrodes of specimen and of objective lens electrode by applying a bias ranging from -200 V to +200 V to the specimen. The agreement of the simulation result with the experimental value is fairly good, and it is understood that the simulation can be used to express the behavior of electrons inside and outside the material as well as the electron trajectory in vacuum of the scanning electron microscope specimen chamber with considerable accuracy.
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Y. Ito, T. Donga, K. Morimoto, and M. Kotera "Simulation of fogging electron trajectories in a scanning electron microscope", Proc. SPIE 10810, Photomask Technology 2018, 108100B (3 October 2018); doi: 10.1117/12.2504822; https://doi.org/10.1117/12.2504822


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