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3 October 2018 Multiple beam technology development and application for defect inspection on EUV wafer/mask
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With technology node shrinking to 7nm and beyond, EUV lithography has been adopted in most of the advanced manufacture fab. This made the killer defect size become even smaller on both wafer and mask. The optical inspection can’t meet the sensitivity requirement, so e-beam inspection is widely used during wafer fabrication, and started to be used in pattern mask inspection (PMI). However, the drawback of e-beam inspection is low throughput. To achieve both good sensitivity and high throughput, we are developing multiple beam inspector(MBI) to meet industry’s need for EUV lithography. In this paper, we discussed e-beam pattern mask inspection(PMI) and wafer inspection, introduced our most advanced multiple beam technology and next generation multiple beam inspector (MBI) development. We have successfully got 9 images on primary beam module, and also images from secondary electron projection module. We also discussed related technologies, e.g. computation and fast stage technology to further improve throughput and lower COO. At last MBI new applications are discussed.
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Eric Ma, Kevin Chou, Xuedong Liu, Weiming Ren, Xuerang Hu, and Fei Wang "Multiple beam technology development and application for defect inspection on EUV wafer/mask", Proc. SPIE 10810, Photomask Technology 2018, 1081014 (3 October 2018);

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