3 October 2018 Applying MPC for EUV mask fabrication
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EUV lithography draws increasing attention and its expectation is rising. For instance, replacing a triple patterning with ArF immersion lithography to EUV single patterning may reduce 50% of cost and 25% of cycle time [1]. At the same time, the importance of MPC (Mask Process Correction) is also growing [2] [3] [4]. It has become no longer possible to handle recent small and complex features using a rule-based bias approach. It is known that EUV lithography masks have a different structural stack so that “short range effect” of EB proximity effect is observed in mask writing [5]. In this paper, we investigated the above short range effect through MPC model calibration. Mask data preparation step of EUV mask case is performed and the Turn-a-around (TAT) is compared with conventional DUV mask case.
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Dai Tsunoda, Yohei Torigoe, Yutaro Sato, Masakazu Hamaji, Gek-Soon Chua, and Christian Bürgel "Applying MPC for EUV mask fabrication", Proc. SPIE 10810, Photomask Technology 2018, 108101H (3 October 2018); doi: 10.1117/12.2502068; https://doi.org/10.1117/12.2502068

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