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6 November 2018 Advanced modulation response analysis of high-speed VCSELs
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Abstract
An innovative model to describe the small-signal modulation response of high-speed multi-mode vertical-cavity surfaceemitting lasers (VCSELs) is presented. Using an advanced theoretical approach, multi-mode rate equations for these VCSELs are established. Moreover, in order to characterize the dynamic performance, a comprehensive analytical fitting function based on this novel approach is derived. This allows the extraction of consistently expanded figures of merit for these laser devices. The main concept of our novel approach is based on carrier reservoir splitting. This is a result of numerous effects such as mode competition and spatial hole burning (SHB). Furthermore, compared to other standard approaches, our novel model includes the effects of carrier diffusion, gain compression and inhomogeneous current injection. Beside the traditionally extracted figures of merit, this model gives insight into photon lifetime and the local distribution of the injection current.
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Wissam Hamad, Marwan Bou Sanayeh, Mustapha Hamad, and Werner Hofmann "Advanced modulation response analysis of high-speed VCSELs", Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108120N (6 November 2018); https://doi.org/10.1117/12.2501216
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