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6 November 2018 Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser
Lingling Hua, Heyang Guoyu, Peng Zhang, Jinrong Tian, Yanrong Song
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Proceedings Volume 10812, Semiconductor Lasers and Applications VIII; 108121D (2018) https://doi.org/10.1117/12.2502641
Event: SPIE/COS Photonics Asia, 2018, Beijing, China
Abstract
The band structure of InGaAs strained quantum wells are investigated using 8×8 Luttinger-Kohn Hamiltonian including conduction band, heavy hole, light hole, spin-orbit splitting and strain effects. The energy dispersion curves of conduction band and valence band, the material gain spectra of TE and TM mode are given, respectively. The variation of peak gain with carrier density, temperature, well width, and Indium composition of InGaAs are calculated. The calculations show that the higher the In composition of InGaAs and the thicker the well, the longer the emitting wavelength are. The higher carrier density and higher In composition lead to the higher peak gain.
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Lingling Hua, Heyang Guoyu, Peng Zhang, Jinrong Tian, and Yanrong Song "Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser", Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108121D (6 November 2018); https://doi.org/10.1117/12.2502641
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KEYWORDS
Quantum wells
Semiconductor lasers
Indium gallium arsenide
Semiconductors
Disk lasers
Gallium arsenide
Band structure simulations
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