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5 November 2018 Modeling of waveguide AlInAs avalanche photodiodes for high-gain-bandwidth product
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Abstract
Modeling of waveguide AlInAs avalanche photodiodes is reported in this work. Based on beam propagation method analyses, the waveguide design and evanescent coupling are investigated at first. The APD dark- and photo-response and multiplication gain are further simulated based on a drift-diffusion method. The frequency response and bandwidth are also evaluated based on carrier transit analysis formalism. Modeling results of I-V curves, multiplication gain, breakdown voltage, excess noise factor, -3dB bandwidth and gain-bandwidth product are presented with some consistently compared with reported experimental demonstration.
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Yegao Xiao, Zhiqiang Li, Yang Sheng, and Zhanming S. Li "Modeling of waveguide AlInAs avalanche photodiodes for high-gain-bandwidth product", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140M (5 November 2018); https://doi.org/10.1117/12.2500929
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