Surface passivation of 1550nm AlxInyAsSb avalanche photodiode

Chunyan Guo; Yuexi Lv; Da’nong Zheng; Yaoyao Sun; Zhi Jiang; Dongwei Jiang; Guowei Wang; Yingqiang Xu; Tao Wang; Jinshou Tian; Zhaoxin Wu; Zhichuan Niu

doi:10.1117/12.2500523

5 November 2018 Surface passivation of 1550nm AlxInyAsSb avalanche photodiode

Chunyan Guo, Yuexi Lv, Da’nong Zheng, Yaoyao Sun, Zhi Jiang, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Tao Wang, Jinshou Tian, Zhaoxin Wu, Zhichuan Niu

Author Affiliations +

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 1081416 (2018) https://doi.org/10.1117/12.2500523
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO₂, SiO₂ after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than -12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations.

Citation Download Citation

Chunyan Guo, Yuexi Lv, Da’nong Zheng, Yaoyao Sun, Zhi Jiang, Dongwei Jiang, Guowei Wang, Yingqiang Xu, Tao Wang, Jinshou Tian, Zhaoxin Wu, and Zhichuan Niu "Surface passivation of 1550nm AlxInyAsSb avalanche photodiode", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081416 (5 November 2018); https://doi.org/10.1117/12.2500523

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