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5 November 2018 Fabrication and performance of Ge-on-Si PIN photodetectors
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With the maturity of germanium (Ge) growth on Si, Ge photodetectors have drawn great interests worldwide, which are potentially used in NIR/MIR light detecting, optical telecommunications, single photon detecting, biosensor applications. Lateral and vertical structured Ge-on-Si PIN photodetectors were fabricated and investigated. A dark current density of 20.4 mA/cm2 was obtained, and small size devices resulted in low dark current values. The responsivity as a function of the wavelength was tested, and the highest responsivity of 0.8 A/W at the wavelength of 1310nm was obtained in vertical structured photodetectors, while the lateral structured photodetectors had the best 3dB bandwidth of 0.5 GHz, which was evaluated from the response time of 0.7 ns. The quantum efficiency was ~76%, and the reason of low 3dB bandwidth was discussed.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei Guo, Xiuwei Yang, Huabing Xiang, Jianqiang He, Anbo Yuan, Pengfei Xiang, Renfang Lei, Naiman Liao, Ping Xiong, and Renhao Li "Fabrication and performance of Ge-on-Si PIN photodetectors", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141C (5 November 2018);

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