Study on impact ionization in charge layer and multiplication layer of InAlAs/InGaAs SAGCM avalanche photodiodes

Jian Chen; Jing Tong; Si-Xun Wang; Wei-Ying Hu; Qiang Xu; Xiu-Min Xie; Qian Dai; Zhu Shi; Libo Yu; Hai-Zhi Song

doi:10.1117/12.2502728

5 November 2018 Study on impact ionization in charge layer and multiplication layer of InAlAs/InGaAs SAGCM avalanche photodiodes

Jian Chen, Jing Tong, Si-Xun Wang, Wei-Ying Hu, Qiang Xu, Xiu-Min Xie, Qian Dai, Zhu Shi, Libo Yu, Hai-Zhi Song

Author Affiliations +

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 108141J (2018) https://doi.org/10.1117/12.2502728
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

Impact ionization in charge layer and multiplication layer of InAlAs/InGaAs avalanche photodiodes (APDs) with separated absorption, grading, charge and multiplication structures has been studied by two-dimensional simulations using Silvaco TCAD. Special attention has been paid to the charge layer and multiplication layer with different thicknesses and doping concentrations in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Band-edge profile calculations as well as current–voltage characteristic and electric field results of the APDs will be discussed in this article.

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Jian Chen, Jing Tong, Si-Xun Wang, Wei-Ying Hu, Qiang Xu, Xiu-Min Xie, Qian Dai, Zhu Shi, Libo Yu, and Hai-Zhi Song "Study on impact ionization in charge layer and multiplication layer of InAlAs/InGaAs SAGCM avalanche photodiodes ", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141J (5 November 2018); https://doi.org/10.1117/12.2502728

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