Paper
5 November 2018 Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer
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Abstract
In this paper, during InAs/GaAs (001) quantum dot molecular beam epitaxy growth, four-beam pulsed laser-interference was used to in-situ irradiate on the wetting layer with an InAs coverage of 1.1 monolayer. Significant atomic layer removal and periodic nanostructures including nanoholes and nanoislands were obtained. These periodic nanostructures had a significant influence on quantum dot growth. Especially for the structure of nano-island, quantum dots preferentially nucleated at the edges of them. When the nano-island size becomes small enough, ordered quantum dot arrays are directly achieved on smooth GaAs surface with a follow-up InAs deposition accompanied by the disappearance of the nanoislands. This finding provides a potential technique leading to site-controlled and defect-free quantum dot fabrication.
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Linyun Yang, Xinning Yang, Lili Miao, Wei Zhang, Dayun Huo, Zhenwu Shi, and Changsi Peng "Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141M (5 November 2018); https://doi.org/10.1117/12.2513815
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KEYWORDS
Quantum dots

Indium arsenide

Nanostructures

Pulsed laser operation

Atomic force microscopy

Fabrication

Gallium arsenide

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