A broadband graphene absorber based on alternating structure of MgF2 and SiO2

Xiaosu Jiang; Zhilin Xia; Chaoyang Wei; Dengwu Liu

doi:10.1117/12.2513682

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9 November 2018 A broadband graphene absorber based on alternating structure of MgF₂ and SiO₂

Xiaosu Jiang, Zhilin Xia, Chaoyang Wei, Dengwu Liu

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Proceedings Volume 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V; 1082620 (2018) https://doi.org/10.1117/12.2513682
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

We propose a novel absorber with over 90% absorption and is not sensitive to polarization at mid-infrared frequencies (from 31.37 THz to 34.14 THz, 2.77 THz broadwith). The structure of the graphene absorber is special in that it has MgF₂ and SiO₂ multilayer stacking unit cells and arrayed on an Au film plane, which can be easy to fabricate under current manufacturing technology. We can adjust the position of the absorption bands by tuning the Fermi energy without changing the geometric parameters of the complex three-dimensional structure. The tunability of this metamaterial absorber can be achieved via changing the external gate voltage to modify the Fermi energy of graphene. Simulation results demonstrate that the absorption efficiency of the proposed structure can be as high as more than 90% from 28.7THz to 34.14 THz with variation of the Fermi energy from 1.6 eV to 2.0 eV. At the same time, we can also change the Fermi energy to achieve high absorption or high reflection of the absorber.

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Xiaosu Jiang, Zhilin Xia, Chaoyang Wei, and Dengwu Liu "A broadband graphene absorber based on alternating structure of MgF₂ and SiO₂", Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 1082620 (9 November 2018); https://doi.org/10.1117/12.2513682

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