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14 August 2018 Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate
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Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 108300S (2018) https://doi.org/10.1117/12.2503624
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland
Abstract
The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be – 1.17 × 10-3 , and 1.12 × 10-3 , respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jarosław Wróbel, Kacper Grodecki, Djalal Benyahia, Krzysztof Murawski, Krystian Michalczewski, Justyna Grzonka, Jacek Boguski, Kinga Gorczyca, Gilberto A. Umana-Membreno, Łukasz Kubiszyn, Artur Kębłowski, Paweł Piotr Michałowski, Emilia Gomółka, Piotr Martyniuk, Józef Piotrowski, and Antoni Rogalski "Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300S (14 August 2018); https://doi.org/10.1117/12.2503624
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