14 August 2018 Theoretical investigation of properties of InAsSb mid-wave infrared detectors
Author Affiliations +
Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 108300U (2018) https://doi.org/10.1117/12.2503626
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland
Abstract
In this work we present the theoretical investigation of the electrical and optical properties of high operating temperature (HOT) mid-wavelength infrared detectors (5 μm at 230 K) based on InAsSb/AlSb heterostructures [1]. In this work the performance comparison of barrier detectors with different doping concentration of n-type absorbing layer is presented. The barrier structure was simulated by commercially available software APSYS. We report on the dependence of the calculated current responsivity on the active layer thickness for a different doping concentration and doping concentration for optimal absorber thickness. Moreover, we show the influence of the bottom contact material on device’s performance.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emilia Gomółka, Emilia Gomółka, Małgorzata Kopytko, Małgorzata Kopytko, Piotr Martyniuk, Piotr Martyniuk, } "Theoretical investigation of properties of InAsSb mid-wave infrared detectors", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300U (14 August 2018); doi: 10.1117/12.2503626; https://doi.org/10.1117/12.2503626
PROCEEDINGS
5 PAGES


SHARE
Back to Top