Translator Disclaimer
14 August 2018 Selected technological aspects of semiconductor samples preparation for Hall effect measurements
Author Affiliations +
Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 108300V (2018) https://doi.org/10.1117/12.2503639
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland
Abstract
The article presents comparison of two alternative method of Hall sample preparation–manual "square" shaped and the cloverleaf one made by full photolithography process. The influence of symmetry and contacts configuration on repeatability of 4-point resistance and Hall resistance versus magnetic field characteristics was a Hall sample quality criterion. The characterization was performed in ±15 T magnetic-field range at 80 K and 300 K, for undoped InAs epitaxial layer, deposited on the GaAs substrate using MBE. It was indicated that the sample made by photolithography had better usefulness for Hall characterization, showing broader magnetic field range by two orders of magnitude than the reference one.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kinga Gorczyca, Jacek Boguski, Jarosław Wróbel, and Piotr Martyniuk "Selected technological aspects of semiconductor samples preparation for Hall effect measurements", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300V (14 August 2018); https://doi.org/10.1117/12.2503639
PROCEEDINGS
5 PAGES


SHARE
Advertisement
Advertisement
Back to Top