14 August 2018 Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector
Author Affiliations +
Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 1083010 (2018) https://doi.org/10.1117/12.2503766
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland
Abstract
We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Krystian Michalczewski, Krystian Michalczewski, Tsung-Tin Tsai, Tsung-Tin Tsai, Piotr Martyniuk, Piotr Martyniuk, Chao-Sin Wu, Chao-Sin Wu, } "Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1083010 (14 August 2018); doi: 10.1117/12.2503766; https://doi.org/10.1117/12.2503766
PROCEEDINGS
6 PAGES


SHARE
Back to Top