Gas flow simulation research on reaction chamber of reactive ion etching

Jingwen Zhang; Fan Bin; Zhiwei Li; Xin Liu; Bincheng Li; Han Yu; Gong Chang

doi:10.1117/12.2512222

30 January 2019 Gas flow simulation research on reaction chamber of reactive ion etching

Jingwen Zhang, Fan Bin, Zhiwei Li, Xin Liu, Bincheng Li, Han Yu, Gong Chang

Proceedings Volume 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics; 108410G (2019) https://doi.org/10.1117/12.2512222
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China

Abstract

Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50～250sccm) inlet conditions , and the influence of the different GAP (L = 0.03～0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber.

Citation Download Citation

Jingwen Zhang, Fan Bin, Zhiwei Li, Xin Liu, Bincheng Li, Han Yu, and Gong Chang "Gas flow simulation research on reaction chamber of reactive ion etching", Proc. SPIE 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics, 108410G (30 January 2019); https://doi.org/10.1117/12.2512222

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available