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8 February 2019 Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer
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Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084305 (2019) https://doi.org/10.1117/12.2504893
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
In this paper, we proposed a p-i-n AlGaN EBL, which is easy to realize in epitaxy, to enhance the electron confinement and improve the hole injection efficiency. The physical and optical properties of GaN-based MQW LEDs with the conventional EBL are also investigated comparatively. The simulation results show that the LEDs with the p-i-n EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the traditional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong reverse electrostatic fields in the p-i-n EBL.
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Jun Wang, Jin Guo, Junbo Feng, Guosheng Wang, and Feng Xie "Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084305 (8 February 2019); https://doi.org/10.1117/12.2504893
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