Paper
8 February 2019 Realization of erythemal UV detector using antiparallel connection of the two GaN based photodiodes
Yang Hu, Jun Wang, Jin Guo, Guowei Chao, JunBo Feng
Author Affiliations +
Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084306 (2019) https://doi.org/10.1117/12.2504896
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
In this paper, we present the design and characterization of a novel GaN based ultraviolet (UV) detector. The detector consists of two GaN PIN diodes, connected in antiparallel configuration. Two layers of AlGaN, a 100 nm Al0.4Ga0.6N barrier layer and a 400 nm Al0.33Ga0.67N filter layer are deposited on top of one of the PIN diodes. The filter layer exhibits strong absorption of photons at about 310 nm and below. The barrier layer improves the short wave rejection ratio as it can prevent the diffusion of the carriers generated in the filter layer. Due to the antiparallel connection of the two diodes, the cutoff wavelength of the detector is 300 nm and the overall photocurrent of the detector provides good similarity to the Erythemal action spectrum.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Hu, Jun Wang, Jin Guo, Guowei Chao, and JunBo Feng "Realization of erythemal UV detector using antiparallel connection of the two GaN based photodiodes", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084306 (8 February 2019); https://doi.org/10.1117/12.2504896
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KEYWORDS
Diodes

Ultraviolet radiation

Gallium

Aluminum

Gallium nitride

Sensors

Ultraviolet detectors

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