Influence of low temperature annealed ultrathin CYTOP buffer layer on the performance of single crystal organic field-effect transistors

Longfeng Jiang; Zhihao Song; Wei Shi; Junsheng Yu

doi:10.1117/12.2506469

8 February 2019 Influence of low temperature annealed ultrathin CYTOP buffer layer on the performance of single crystal organic field-effect transistors

Longfeng Jiang, Zhihao Song, Wei Shi, Junsheng Yu

Author Affiliations +

Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 1084318 (2019) https://doi.org/10.1117/12.2506469
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China

Abstract

We fabricated the organic field-effect transistors (OFETs) integrating C8-BTBT single crystalline microribbon arrays as the organic semiconductor. A low temperature (60°C) annealed ultrathin CYTOP buffer layer was inserted between the semiconductor and the electrodes to improve the performance of the OFETs. The charge mobility was increased from 1.7 to 3.6 cm² V^-1 s^-1 through inserting the buffer layer. The performance enhancement was attributed to the significant decrease of the large contact resistance of the OFETs caused by the thick C₈-BTBT single crystalline microribbons, which was reduced from 1.6 to 0.14 MΩ cm by inserting CYTOP buffer layer with thickness of 6 nm. Meanwhile, the CYTOP buffer layer not only protected the C₈-BTBT single crystalline microribbon arrays from the harm of electrode evaporation, but also had no destructive effect on the C₈-BTBT active layer. The outstanding results show an effective method of reducing the contact resistance to improve the performance of OFETs.

Citation Download Citation

Longfeng Jiang, Zhihao Song, Wei Shi, and Junsheng Yu "Influence of low temperature annealed ultrathin CYTOP buffer layer on the performance of single crystal organic field-effect transistors", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084318 (8 February 2019); https://doi.org/10.1117/12.2506469

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