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8 February 2019 Ultra-high responsivity graphene-CIS/ZnS QDs hybrid photodetector
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Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 108431B (2019) https://doi.org/10.1117/12.2506576
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
With the wide application of graphene in the field of photoelectric field, many researchers have paid increasingly attention to the graphene photodetectors. However, the absorption of graphene to light is only 2.3%, which limited the photoresponsivity of graphene photodetectors. In recent years, benefited from the development of solar cells and LED industry, more and more optical-nano-materials have been measured. The combination of these materials and graphene is a way to improve the responsivity of graphene photodetectors. CuInS2/ZnS quantum dots material has a long carrier lifetime and high absorption for light. We have prepared a photodetector based on CuInS2/ZnS quantum dots and mechanical peeling graphene, which presented a responsivity up to 2.5×105 A W-1. The ultra-high responsivity is attributed to the high photoconductive gain of the device. Further more, we have discussed the photogating effect which is the reason of the high photoconductive gain.
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Rui Pan and Jun Wang "Ultra-high responsivity graphene-CIS/ZnS QDs hybrid photodetector", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 108431B (8 February 2019); https://doi.org/10.1117/12.2506576
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