Paper
8 February 2019 TFT with ultra-low temperature poly-silicon technology for flexible liquid crystal display
Xuexin Lan, Yanmei Li, Lihua Zheng, Guozhao Chen, Junyi Li, Xuhui Peng
Author Affiliations +
Proceedings Volume 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging; 108431R (2019) https://doi.org/10.1117/12.2512314
Event: Ninth International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT2018), 2018, Chengdu, China
Abstract
Low temperature poly silicon technology with a temperature of 400℃ was developed and discussed for the application of flexible liquid crystal display (LCD). By optimizing the doping and activation processes, the TFT device with a mobility of 80 cm2/V•s was fabricated successfully. Also we studied the mechanism of doping and activation at 400℃, and found out that the upper limit of implanted dosage and electrical activation rate were 2 × 1014 ions/cm2 and 20%, respectively.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuexin Lan, Yanmei Li, Lihua Zheng, Guozhao Chen, Junyi Li, and Xuhui Peng "TFT with ultra-low temperature poly-silicon technology for flexible liquid crystal display", Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 108431R (8 February 2019); https://doi.org/10.1117/12.2512314
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Doping

Silicon

LCDs

Ions

Glasses

Amorphous silicon

RELATED CONTENT

Advanced glass substrates for flat panel displays
Proceedings of SPIE (April 01 1994)
Excimer laser crystallized poly-Si TFTs on plastic substrates
Proceedings of SPIE (February 25 2002)
Ion shower doping system for TFT-LCDs
Proceedings of SPIE (April 10 1997)
Poly-Si TFTs for Active-Matrix LCDs
Proceedings of SPIE (July 25 1989)

Back to Top