Translator Disclaimer
Paper
12 December 2018 GeSn on Si avalanche photodiodes for short wave infrared detection
Author Affiliations +
Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 108461B (2018) https://doi.org/10.1117/12.2504669
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China
Abstract
A mesa-type normal incidence separate-absorption-charge-multiplication (SACM) Ge0.95Sn0.05/Si avalanche photodiode (APD) was fabricated. The 60-μm-diameter avalanche photodiode achieved a responsivity of ~5A/W (gain=24) and ~3.1A/W (gain=20) at 98% breakdown voltage (-14.2V) under 1310nm and 1550nm illumination respectively with a low dark current of 10μA. The −3 dB bandwidth for a 60-μm-diameter APD is about 1-1.25GHz for gains from 5 to 20, resulting in a gain-bandwidth product of 25GHz for a C-band communication wavelength of 1550nm.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dongliang Zhang, Xiaoyan Hu, Dachuan Liu, Xiao Lin, Weiping Wang, Ziyu Ding, Zhiqiang Wang, Buwen Cheng, and Chunlai Xue "GeSn on Si avalanche photodiodes for short wave infrared detection", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108461B (12 December 2018); https://doi.org/10.1117/12.2504669
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top