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12 December 2018 InGaAsP/InP based Q-modulated slotted Fabry-Perot laser employing lossy half-wave trenches
Wei Wang, Yimin Xia, Zhipeng Hu, Jianjun He
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Proceedings Volume 10849, Fiber Optic Sensing and Optical Communication; 108490M (2018) https://doi.org/10.1117/12.2504700
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China
Abstract
A 3-section deep etched Q-modulated slotted Fabry-Perot laser (QMSFP) composed of a modulator, a gain section and a filter is designed and simulated with transfer matrix method and traveling wave method and finally experimentally demonstrated in this paper. This QMSFP has been fabricated in 1550 nm InGaAsP/InP-MQW wafer with Quantum Well Intermixing (QWI) technology. The static measurement results show that an extinction ratio (ER) of 13.6 dB can be achieved with the modulator length of 66.4 μm and the reverse bias of 0 V and 6.5 V at specific injection current in the gain section and filter section. The lasing threshold current difference between ON and OFF states can approach 10 mA under fixed current of the filter section. The Side Mode Suppression Ratio (SMSR) of the ON state is >34 dB with the measured output power from the front face >149 μW. There is no mode-hop between ON and OFF state. The dynamic simulation results under high speed modulation will also be presented.
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Wei Wang, Yimin Xia, Zhipeng Hu, and Jianjun He "InGaAsP/InP based Q-modulated slotted Fabry-Perot laser employing lossy half-wave trenches", Proc. SPIE 10849, Fiber Optic Sensing and Optical Communication, 108490M (12 December 2018); https://doi.org/10.1117/12.2504700
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KEYWORDS
Modulators
Reflectivity
Modulation
Absorption
Reflectors
Quantum wells
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