30 January 1989 Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species.
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Deep-UV (240-250 nm) lithography is of one the most promising new lithographic techniques for patterning devices with 0.35-0.5 μm structures. Chemically amplified resists have been reported to meet the necessary requirements of both excimer laser and Hg source-based exposure tools. The chemistry of one family of these materials involves the photogeneration of organic acid catalysts from 2,6-dinitrobenzyl esters, which, upon mild heating, effect the removal of a t-butoxy carbonyl protecting group from poly(t-butoxycarbonyloxy-α-methylstyrene), [poly(t-BOC-α-methylstyrene)]. The thermal behavior of the esters has been examined, and the quantum yield determined for selected examples. A lithographic evaluation of resists based upon several organic ester acid precursors and poly(t-BOC-α-methylstyrene) has been made. Sensitivities ranging from 2 to 100 mJ/cm2 in the deep-UV region have been observed, and 0.5 μm resolution has been demonstrated, using a contact printer equipped with a 248 nm laser source.
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T. X. Neenan, T. X. Neenan, F. M. Houlihan, F. M. Houlihan, E. Reichmanis, E. Reichmanis, J. M. Kometani, J. M. Kometani, B. J. Bachman, B. J. Bachman, L. F. Thompson, L. F. Thompson, } "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species.", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953012; https://doi.org/10.1117/12.953012

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