30 January 1989 Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species.
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Abstract
Deep-UV (240-250 nm) lithography is of one the most promising new lithographic techniques for patterning devices with 0.35-0.5 μm structures. Chemically amplified resists have been reported to meet the necessary requirements of both excimer laser and Hg source-based exposure tools. The chemistry of one family of these materials involves the photogeneration of organic acid catalysts from 2,6-dinitrobenzyl esters, which, upon mild heating, effect the removal of a t-butoxy carbonyl protecting group from poly(t-butoxycarbonyloxy-α-methylstyrene), [poly(t-BOC-α-methylstyrene)]. The thermal behavior of the esters has been examined, and the quantum yield determined for selected examples. A lithographic evaluation of resists based upon several organic ester acid precursors and poly(t-BOC-α-methylstyrene) has been made. Sensitivities ranging from 2 to 100 mJ/cm2 in the deep-UV region have been observed, and 0.5 μm resolution has been demonstrated, using a contact printer equipped with a 248 nm laser source.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. X. Neenan, T. X. Neenan, F. M. Houlihan, F. M. Houlihan, E. Reichmanis, E. Reichmanis, J. M. Kometani, J. M. Kometani, B. J. Bachman, B. J. Bachman, L. F. Thompson, L. F. Thompson, } "Chemically Amplified Resists: A Lithographic Comparison of Acid Generating Species.", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); doi: 10.1117/12.953012; https://doi.org/10.1117/12.953012
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