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30 January 1989 High Contrast Single Layer Resists And Antireflection Layers - An Alternative To Multilayer Resist Techniques
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Abstract
Optical lithography is reflection limited within the limits of the image contrast provided by the exposure tool. The introduction of antireflection layers (ARLs) enables the use of high contrast resists which reproduce the optical image within the theoretically maximum possible range. If such resists are available, the need for multilayer resist techniques is appreciably reduced. This work reviews the known lithographic tools that counteract the reflection problem especially in the case of Al-layers, and extends the application of ARLs to silicide, poly-Si and dielectric layers on Si. The results are based on simulations performed with SAMPLE and experimental work on submicron devices.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Nolscher, L. Mader, and M. Schneegans "High Contrast Single Layer Resists And Antireflection Layers - An Alternative To Multilayer Resist Techniques", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953036
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