Positive Photoresist Development: A Multiple State Percolation Model

Peter Trefonas III

doi:10.1117/12.953061

30 January 1989 Positive Photoresist Development: A Multiple State Percolation Model

Peter Trefonas III

Proceedings Volume 1086, Advances in Resist Technology and Processing VI; (1989) https://doi.org/10.1117/12.953061
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

A 3-dimensional multiple state molecular-scale model is described for simulating the exposure and development of positive diazonaphthoquinone/novolac-type photoresist. Resist composition and properties of the individual components are specified; development proceeds through percolational approach. A second macro-scale simulator then uses the dose/response information generated by the molecular scale model to simulate exposure and development of resist profiles in three dimensions. Simulation results are presented to describe the effects of varying the PAC/resin ratio, resin dissolution rate, and the number of photoactive groups per molecule in terms of lithographically relevant properties such as contrast, energy reaction order and resist profile appearance.

Citation Download Citation

Peter Trefonas III "Positive Photoresist Development: A Multiple State Percolation Model", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953061

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