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30 January 1989 Sub-half-micron Patterning Characteristics of Silicone-based Positive (SPP) and Negative (SNP) Resists in KrF Excimer Laser Lithography
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Abstract
The concept is attained that controlling of the dissolution rate ratio between completely exposed and unexposed resist areas is useful for obtaining steeper resist profiles and higher resolution when resists have high absorbance. Its usefulness is confirmed by experiments. Using 0.4 μm thick SPP with absorbance of 0.4, the linear relation between mask and resist pattern line widths is maintained to 0.40 μm line and space patterns. 0.36 μm line and space patterns with vertical walls are obtained in 0.4 μm thick SNP with absorbance of 1.2.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshio Kawai, Akinobu Tanaka, Yoshiharu Ozaki, Kiichi Takamoto, and Akira Yoshikawa "Sub-half-micron Patterning Characteristics of Silicone-based Positive (SPP) and Negative (SNP) Resists in KrF Excimer Laser Lithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953029
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