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30 January 1989 Ultrahigh Resolution Positive Working Photoresist For Half-Micron Photolithography
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Abstract
Along with the increase in the integrations of IC's, the process dimensions of photolithography is proceeding to more and more fine patterns. In the fabrication of 16 Mega bit DRAM which is the next generation device, the photolithography will be required to have a technology close to half micron geometry work. The role to be played by photoresists in such geometry work is extremely large and important. Under such circumstance, we have developed ultrahigh resolution positive working photoresist, TSMR-V3 which can cope with a half micron photolithography.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Satoh, Hidekatsu Kohara, Nobuo Tokutake, Kohichi Takahashi, and Toshimasa Nakayama "Ultrahigh Resolution Positive Working Photoresist For Half-Micron Photolithography", Proc. SPIE 1086, Advances in Resist Technology and Processing VI, (30 January 1989); https://doi.org/10.1117/12.953047
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