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19 July 1989 A Systematic Approach for I-line Manufacturing Process Optimization
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A framework for process optimization and characterization was discussed and applied to the development of an 0.8μm i-line lithography process for CMOS manufacturing. Response surface and characterization data were presented. Metrics for process optimization were discussed. Depth of focus windows for i-line and g-line lithography were compared for resist materials of similar capability run with optimized processes. Depth of focus data on 3 different stepper types were used to draw conclusions: a 0.38 NA g-line and 0.40 NA i-line from Manufacturer 1, and a 0.48 NA g-line from Manufacturer 2. I-line resists from 2 different manufacturers were seen to have similar depth of focus characteristics. Maintaining acceptable wall angle for the resist profile was found to be a more severe constraint on the depth of focus than maintaining critical dimension control. The i-line resist offered better wall angle than g-line resist, but less global process stability. At center of field, i-line lenses and currently available i-line resists have effectively 10 to 20% more depth of focus than g-line lenses and g-line resists at comparable resolution.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Khoi Phan, Michael Templeton, and Edwin Sum "A Systematic Approach for I-line Manufacturing Process Optimization", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989);

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