Accuracy of Spatial Metrology

Karl Harris; Israel Nadler-Niv; Dorron Levy

doi:10.1117/12.953079

19 July 1989 Accuracy of Spatial Metrology

Karl Harris, Israel Nadler-Niv, Dorron Levy

Proceedings Volume 1087, Integrated Circuit Metrology, Inspection, and Process Control III; (1989) https://doi.org/10.1117/12.953079
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

The advantages of electron-beam based metrology over photon-optical have been well established. Those advantages include (1) the ability to truly resolve feature ulgo of 0.1 μm or less, (2) the ability to accurately measure features with aspect ragas above 1 to 1, and (3) negligible sensitivity to thickness variationsl . A further advancement of e-beam based metrology is a novel method called. Spatial Metrology, introduced at this conference last year. Spatial Metrology is not based on the e-beam image but rather on a unique secondary electron signal. The major advantage of Spatial Metrology is accurate top and bottom linewidth measurement, without the need to cross section the wafer.

Citation Download Citation

Karl Harris, Israel Nadler-Niv, and Dorron Levy "Accuracy of Spatial Metrology", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); https://doi.org/10.1117/12.953079

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