19 July 1989 Electron Beam Metrology For Integrated Circuit Structures: Predictions And Experiments
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Abstract
A Monte Carlo program named SEEL (Simulation of Electron Energy Loss) was developed to simulate electron trajectories in arbitrary line geometries. Submicron scale electronic structures were fabricated in order to compare the simulation with experimental results. SEEL was used to determine the radial exposure distribution for electron energy dissipated in resist during electron beam lithography. A companion program called PRESTO (PRoximity Effect Simulation TOO was developed to predict the exposure of submicron scale patterns. Exposures were made for the purpose of comparing the experimental patterns with simulations.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sylvester Johnson, Jo A. McMillan, and Noel C. MacDonald "Electron Beam Metrology For Integrated Circuit Structures: Predictions And Experiments", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953073; https://doi.org/10.1117/12.953073
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