19 July 1989 Scanning Photon And Scanning Electron Metrology On Photomasks
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Abstract
Resist and chromium features on electron beam generated photomasks ranging from 0.4 to 10. μm were measured with a classical scanning slit optical microscope, a confocal scanning laser microscope and a low -voltage scanning electron microscope. The scanning slit microscope was used in a calibrated way. The results obtained with those instruments are compared mutually and with the designed values. The accuracy of the measurements is evaluated using a model for electron beam exposure of resist in order to explain trends observed in the measurements. The results show that these systems can be used for mask metrology of sub -micron features with mutual differences of about 10 nm. The resolution limit of the optical systems appeared to be 0.4 μm.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert H. J. Fastenau, Kevin M. Monahan, Barry J. Jennings, Martin J. Verheijen, "Scanning Photon And Scanning Electron Metrology On Photomasks", Proc. SPIE 1087, Integrated Circuit Metrology, Inspection, and Process Control III, (19 July 1989); doi: 10.1117/12.953106; https://doi.org/10.1117/12.953106
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