Paper
25 July 1989 Effect of Alignment Marks Design and Processing Factors on Overlay Accuracy
Egil D. Castel, Nader Shamma
Author Affiliations +
Abstract
A series of alignment experiments was carried out in order to specify and optimize the design parameters for the site-by-site alignment marks used in an advanced single polysilicon bipolar process (ASPECT**). An Ultratech model 900 projection stepper which employs a dark field alignment system was used as the exposure tool. Alignment evaluations were performed for all masking levels of the ASPECT process with special emphasis placed on polysilicon and metal masking levels. The use of optimized targets resulted in a drastic improvement in registration accuracy: alignment statistics collected on a large number of samples with optimized targets for polysilicon to isolation alignment indicated a registration accuracy of +/- 0.27 um (2 sigma), whereas standard targets yielded +/- 0.50 um (2 sigma). For alignments of metal levels the values were +/- 0.40 um and +/- 1.0 um, respectively; thus the use of optimized targets allowed on reflective layers an alignment accuracy equal to or better than the stepper capabilities published by the manufacturer: Ultratech specifies an overlay budget of +/- 0.40 um (2 sigma) for a single stepper. This improvement in overlay accuracy translated into a large decrease in number of reworks and a significant improvement in product yield.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Egil D. Castel and Nader Shamma "Effect of Alignment Marks Design and Processing Factors on Overlay Accuracy", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953150
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical alignment

Metals

Photoresist materials

Overlay metrology

Etching

Manufacturing

Reticles

RELATED CONTENT

Single-mask double-patterning lithography
Proceedings of SPIE (September 23 2009)
Application Specific Wafer Stepper
Proceedings of SPIE (January 01 1987)
Lens heating induced focus drift of I line step and...
Proceedings of SPIE (August 22 2001)
Achieving overlay budgets for double patterning
Proceedings of SPIE (March 16 2009)
Advanced mix and match using a high NA i line...
Proceedings of SPIE (July 05 2000)

Back to Top