25 July 1989 Image Reversal Process Using PR1024MB Photo Resist By KrF Excimer Laser Lithography
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PR1024MB photo resist, one of the novolac based positive type resist for i-line lithography, showed nonreciprocal behavior under the condition of high power KrF excimer laser exposure, and a negative type reaction was induced. This reaction was accelerated by an additional reversal bake and a flood exposure, which were well known technique as image reversal process for g-line and i-line lithography. In the image reversal process with KrF excimer, it was observed that the sensitivity became higher as the reversal bake temperature increased. Furthermore, the change in resist pattern profile from undercutting shape to rectangular form was observed with the increase of reversal bake temperature. However this image reversal process required a higher exposure dose because of its nonlinear reaction, the resist pattern profiles obtained were much better than the triangular shape formed by the normal positive type reaction. The dependence of resist pattern profile and sensitivity on flood exposure wavelength and energy was quite small. It was concluded that the key parameter of this process was the reversal bake temperature, and fine patterns less than 0.5 um with steep sidewall were obtained by optimizing the process conditions.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Tokui, A. Fukui, K. Tsukamoto, Y. Akasaka, "Image Reversal Process Using PR1024MB Photo Resist By KrF Excimer Laser Lithography", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953175; https://doi.org/10.1117/12.953175


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