25 July 1989 Moire Alignment Technique For Projection Photolithographic System
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Proceedings Volume 1088, Optical/Laser Microlithography II; (1989); doi: 10.1117/12.953153
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States
Abstract
We are developing a projection moire alignment technique in order to obtain an alignment accuracy of better than 0.1μm(3σ) using simple alignment optics in a projection photolitographic system.[1] Chromatic aberration between the exposure light(g-line) and the alignment light(He-Ne Laser) was compensated using fundamental moire theory without compricated optical unit. The beam pointing stability of He-Ne laser has affected an alignment accuracy. By taking reference beam befor incident on the wafer, we have removed this problem. We obtained an alignment accuracy of 0.07μm in resist mark and 0.10μm in Si etched mark.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dai Sugimoto, Seiichiro Kimura, Tsutomu Nomura, Yoshiyuki Uchida, Shuzo Hattori, "Moire Alignment Technique For Projection Photolithographic System", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953153; https://doi.org/10.1117/12.953153
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KEYWORDS
Optical alignment

Moire patterns

Semiconducting wafers

Reticles

Wafer-level optics

Sensors

Signal detection

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