25 July 1989 Moire Alignment Technique For Projection Photolithographic System
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Abstract
We are developing a projection moire alignment technique in order to obtain an alignment accuracy of better than 0.1μm(3σ) using simple alignment optics in a projection photolitographic system.[1] Chromatic aberration between the exposure light(g-line) and the alignment light(He-Ne Laser) was compensated using fundamental moire theory without compricated optical unit. The beam pointing stability of He-Ne laser has affected an alignment accuracy. By taking reference beam befor incident on the wafer, we have removed this problem. We obtained an alignment accuracy of 0.07μm in resist mark and 0.10μm in Si etched mark.
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Dai Sugimoto, Dai Sugimoto, Seiichiro Kimura, Seiichiro Kimura, Tsutomu Nomura, Tsutomu Nomura, Yoshiyuki Uchida, Yoshiyuki Uchida, Shuzo Hattori, Shuzo Hattori, } "Moire Alignment Technique For Projection Photolithographic System", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); doi: 10.1117/12.953153; https://doi.org/10.1117/12.953153
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