Photomask Limitations And Directions

John G. Skinner

doi:10.1117/12.953129

25 July 1989 Photomask Limitations And Directions

John G. Skinner

Proceedings Volume 1088, Optical/Laser Microlithography II; (1989) https://doi.org/10.1117/12.953129
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

In the vast world of integrated circuits mask making is often taken for granted. This was particularly true a decade ago when the availability of a commercial a-beam machine, MEBES, considerably improved the accuracy of photomasks and simplified the manufacturing process. At present we have the capability to meet today's needs [~ 0.9 micron design rules] but we do not have the capabilities for the next reduction in design rules [~ 0.5 micron in ~1990/1]. Pattern generators, resist, measuring equipment, and defect detection are all suspect as we push photomask tolerances into the sub-micron region. This talk will review some of the limitations in today's photomask fabrication and some of the opportunuities that lie ahead.

Citation Download Citation

John G. Skinner "Photomask Limitations And Directions", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953129

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