In the vast world of integrated circuits mask making is often taken for granted. This was particularly true a decade ago when the availability of a commercial a-beam machine, MEBES, considerably improved the accuracy of photomasks and simplified the manufacturing process. At present we have the capability to meet today's needs [~ 0.9 micron design rules] but we do not have the capabilities for the next reduction in design rules [~ 0.5 micron in ~1990/1]. Pattern generators, resist, measuring equipment, and defect detection are all suspect as we push photomask tolerances into the sub-micron region. This talk will review some of the limitations in today's photomask fabrication and some of the opportunuities that lie ahead.