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25 July 1989 Resist Pattern Analysis For Submicron Feature Size Using 3-D Photolithography Simulator
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Abstract
Photolithography has been used for manufacturing LSIs for a long time and it also becomes a key technology for submicrometer VLSIs. Three dimensional photolithography simulator, RESPROT, has been developed, and reported its concept and application data at the last SPIE's symposium, Vol : 922-02. In this paper RESPROT was improved to simulate optical aberrations, proximity effects and repeatable reticle defects which are remarkably important process factors on submicrometer pattern transfer. And resist pattern printability or fidelity were studied. At first three dimensional simulator, RESPROT, was improved for the quantitative calculation of higher order reduction lens aberrations and contrast enhance layer, CEL, for resist images. It was confirmed by the calculations that there is existent sixth order aberration and critical dimension loss was decreased by using of CEL. For proximity effect it is slightly improved by higher numerical aperture, NA, but resist images are deformed on defocusing. Printability of submicron reticle defects are depend on the defect type ; clear or dark defects. Both defects decrease imaged resist sizes on defocusing, but these are transferred more clearly on higher NA imaging. Also reticle defects are printed with more faithful by optical aberrations.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuya Kadota, Tetsuo Ito, Hiroshi Fukui, Masaki Nagao, Aritoshi Sugimoto, Masahiro Nozaki, and Takeshi Kato "Resist Pattern Analysis For Submicron Feature Size Using 3-D Photolithography Simulator", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953138
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