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25 July 1989 The Design, Characterization, and Implementation of a One Micron Lithography Process in a High Volume Manufacturing Line
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Abstract
The design of a manufacturable, cost effective one micron lithography process requires locating and optimizing the largest manufacturing window of focus, exposure, and bias for each critical cd layer. Special attention must be paid to the resist and thin film coupling effects on critical dimensions and resist clear point, Eo. Similar characterization and optimization must be performed for registration control as well. This paper explores optimization techniques that proved successful in determining the process parameters which yield the best manufacturing tolerances. Distribution centering techniques will also be discussed as well as the key approaches to implementing a process which does not require any lot dependent adjustments or test wafers. The case for non-adjustment processing can not be overstated for if the process is constantly "tweaked" for exposure or offsets, stability and control is impossible and so is low cost, high output production. The steps to use in designing, characterizing and controlling a no-adjust lithography process are outlined in this paper.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jamie S. Van De Ven and Joseph C. Langston "The Design, Characterization, and Implementation of a One Micron Lithography Process in a High Volume Manufacturing Line", Proc. SPIE 1088, Optical/Laser Microlithography II, (25 July 1989); https://doi.org/10.1117/12.953142
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