1 August 1989 0.25 µm Trench Etching By ECR Plasma
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Abstract
Fine pattern was delineated by an electron beam (E-beam) exposure system and an electron cyclotron resonance (EcR) plasma etcher. First, "micro-loading effect", which is apt to reduce an etching rate in a much smaller pattern, was investigated by photoresist etching with 02 gas, and the relationship between the above effect and the 02 pressure was obtained. Secondly, a very fine Si trench structure was etched with mixing etchant gases of C12 and 02. A Si trench structure with 0.25 μm width and 1.5 μm depth was achieved by a novel etching technology that both the amount of 02 and radio frequence (RF) bias power were changed during etching.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Fujiwara, K. Fujimoto, H. Araki, Y. Tobinaga, "0.25 µm Trench Etching By ECR Plasma", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968543; https://doi.org/10.1117/12.968543
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