1 August 1989 0.25 µm Trench Etching By ECR Plasma
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Abstract
Fine pattern was delineated by an electron beam (E-beam) exposure system and an electron cyclotron resonance (EcR) plasma etcher. First, "micro-loading effect", which is apt to reduce an etching rate in a much smaller pattern, was investigated by photoresist etching with 02 gas, and the relationship between the above effect and the 02 pressure was obtained. Secondly, a very fine Si trench structure was etched with mixing etchant gases of C12 and 02. A Si trench structure with 0.25 μm width and 1.5 μm depth was achieved by a novel etching technology that both the amount of 02 and radio frequence (RF) bias power were changed during etching.
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H. Fujiwara, H. Fujiwara, K. Fujimoto, K. Fujimoto, H. Araki, H. Araki, Y. Tobinaga, Y. Tobinaga, } "0.25 µm Trench Etching By ECR Plasma", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968543; https://doi.org/10.1117/12.968543
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