A High Throughput Electron Lithography System Using A Field Emission Gun

W. B. Thompson; Y. Nakagawa; M. Hassel Shearer; H. Nakazawa; H. Takemura; M. Isobe; N. Goto

doi:10.1117/12.968534

1 August 1989 A High Throughput Electron Lithography System Using A Field Emission Gun

W. B. Thompson, Y. Nakagawa, M. Hassel Shearer, H. Nakazawa, H. Takemura, M. Isobe, N. Goto

Proceedings Volume 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII; (1989) https://doi.org/10.1117/12.968534
Event: 1989 Santa Clara Symposium on Microlithography, 1989, San Jose, CA, United States

Abstract

Production quantities of GaAs FET's and MMIC's are now in demand for satellite communications and defense applications. These devices often require gate lengths below 0.25 microns. Recently production and pilot production of MMIC's and FET'S with sub-100nm gates has started. In order to satisfy the requirements of these new technologies JEOL developed a high throughput submicron and nanometric lithography system based on a field emission electron gun. This system provides stable performance with electron probe current densities in excess of 1000 A/cm² while simultaneously providing stitching and overlay accuracies better than 0.05μm(3σ) with a minimum pattern width of 15nm. We will discuss the system and performance characteristics of this machine and present results from a recent installation.

Citation Download Citation

W. B. Thompson, Y. Nakagawa, M. Hassel Shearer, H. Nakazawa, H. Takemura, M. Isobe, and N. Goto "A High Throughput Electron Lithography System Using A Field Emission Gun", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968534

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