1 August 1989 Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate Structures
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Abstract
This paper will discuss direct-write electron beam lithography and multilayer resist processing for the fabrication of T-shaped gates. Gates whose length at the bottom of the "T" are less than 100 nm have been fabricated by this method using a multilayer of polynethylnethacrylate and lift-off. Because of the large cross-section of the T-gate, the resistance is reduced. The end-to-end resistance of the 100 nm T-shaped lines was less than 25) Ohninin as compered to 2000 Ohm/nin for a 100 nm conventional gate, i.e., an eight-fold decrease. In order to facilitate the fabrication of these gates a series of computer programs were written to simulate the development process in a multilayer of electron resists. These programs are based on a string development model of resist development. They allowed rapid prediction of the resist profiles. As a demonstration of the increased device performance made possible by this prociss, modulation-doped field effect transistors (HOLEY) have been fabricated using these T-gate structures . The extrapolated unity current gain frequency (ft) of these transistors is 113 Gilz.
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R. C. Tiberio, R. C. Tiberio, J. M. Limber, J. M. Limber, G. J. Galvin, G. J. Galvin, E. D. Wolf, E. D. Wolf, } "Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate Structures", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); doi: 10.1117/12.968521; https://doi.org/10.1117/12.968521
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