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1 August 1989 Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate Structures
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This paper will discuss direct-write electron beam lithography and multilayer resist processing for the fabrication of T-shaped gates. Gates whose length at the bottom of the "T" are less than 100 nm have been fabricated by this method using a multilayer of polynethylnethacrylate and lift-off. Because of the large cross-section of the T-gate, the resistance is reduced. The end-to-end resistance of the 100 nm T-shaped lines was less than 25) Ohninin as compered to 2000 Ohm/nin for a 100 nm conventional gate, i.e., an eight-fold decrease. In order to facilitate the fabrication of these gates a series of computer programs were written to simulate the development process in a multilayer of electron resists. These programs are based on a string development model of resist development. They allowed rapid prediction of the resist profiles. As a demonstration of the increased device performance made possible by this prociss, modulation-doped field effect transistors (HOLEY) have been fabricated using these T-gate structures . The extrapolated unity current gain frequency (ft) of these transistors is 113 Gilz.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. C. Tiberio, J. M. Limber, G. J. Galvin, and E. D. Wolf "Electron Beam Lithography And Resist Processing For The Fabrication Of T-Gate Structures", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989);

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