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1 August 1989 Electron Beam Lithography Using A New Quadrupole Triplet
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Abstract
A new type of a quadrupole correction lens system with lower aperture aberration coefficients has been developed for electron beam lithography system. The new correction lens consists of three-stage electrostatic quadrupoles and two aperture electrodes placed between quadrupoles. An octupole field for correction of aperture aberration is automatically created and aligned with quadrupole field by supplying a voltage to the aperture electrode and has its peak near the edge portion of the quadrupole. A new type of mechanical construction of the quadrupole correction system is developed for realizing the high precision alignment of the electrodes. Optical properties of the new correction lens are exactly calculated by using the simulated potential distributions. Aperture aberration of the new correction lens can be corrected to better than 0.1 mm. The probe-forming properties of the new correction lens are confirmed from the secondary electron images.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeo Okayama "Electron Beam Lithography Using A New Quadrupole Triplet", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968516
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