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1 August 1989 FIB-Assisted Cl2 Gas Etching of GaAs
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Abstract
The FIB-assisted Cl2 etching of GaAs were studied by using 10 keV and 5 keV Ga+ ions. The etching yield, which is defined as the number of GaAs molecules etched by one Ga+ ion, was about 20 time as large as the sputtering yield without C12 molecules for both 10 keV and 5 keV ions. The PL intensity of the etched sample with 10 keV and 5 keV ions were 1/30~1/40 and ~1/10, respectively, compared to the initial value. From these results, it is concluded that the use of Ga+ ions with lower energy is effective to reduce the damage induced in GaAs processed by Ga+ FIB assisted C12 etching.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Sugimoto, M. Taneya, H. Hidaka, K. Akita, H. Sawaragi, H. Kasahara, and R. Aihara "FIB-Assisted Cl2 Gas Etching of GaAs", Proc. SPIE 1089, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, (1 August 1989); https://doi.org/10.1117/12.968514
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